Optimized multi gain LNA enabling low current and high linearity including highly linear active bypass

ABSTRACT

An LNA having a plurality of paths, each of which can be controlled independently to achieve a gain mode. Each path includes at least an input FET and an output FET coupled in series. A gate of the output FET is controlled to set the gain of the LNA. Signals to be amplified are applied to the gate of the input FET. Additional stacked FETs are provided in series between the input FET and the output FET.

BACKGROUND (1) Technical Field

This invention generally relates to low noise amplifiers (LNAs), andmore specifically to solid state LNAs having low gain/low current modeswith high linearity.

(2) Background

In many instances today, it is useful to have a radio frequency (RF)front end to receive and initially amplify signals. For example, withina communications receiver, an RF front end is typically provided thatincludes a low noise amplifier (“LNA”). The LNA is responsible forproviding the first stage amplification to a signal received within thecommunications receiver. The operational specifications of the LNA arevery important to the overall quality of the communications receiver.Any noise or distortion in the input to the LNA will get amplified andcause degradation of the overall receiver performance. Accordingly, thesensitivity of a receiver is, in large part, determined by the qualityof the front end and in particular, by the quality of the LNA. Suchfront ends are frequently required to operate over a relatively broaddynamic range. That is, the signals received may at times be very weakand at other times, they may be very strong. The noise figure of the LNAdetermines the sensitivity (i.e., how weak a received signal can be andstill be amplified with acceptable fidelity). The third order intercept(or other such measures of linearity) indicate how strong a receivedsignal can be without non-linear components rising up to cause anunacceptable amount of distortion. Significant challenges arise inattempting to design a high performance LNA for use over such a widedynamic range. That is, in order to provide such a high performance LNA,the gain of the LNA is preferably adjustable, including active bypassmode. In active bypass mode, the amplifier may provide either zero gainor negative gain (i.e., attenuation) while still providing an activebuffer between the input and output of the front end. In addition, thenoise figure, linearity, input impedance and output impedance preferablyremain relatively constant as the gain changes. One way to accomplishthis is to provide an amplifier with substantial gain that can bereduced. In amplifiers having wide dynamic range, the gain of the LNA isreduced when a relatively high-powered signal is received. Reducing thegain of the LNA reduces the risk that components within the rest of thereceiver chain will become saturated. However, while the gain applied tothe received signal can be reduced in several ways, there are typicallydrawbacks to each way.

In a conventional LNA configured as a cascode, the LNA is a two-stageamplifier having two transistors. The first is configured as a “commonsource” input transistor, e.g., input field effect transistor (FET). Thesecond is configured in a “common gate” configuration as an outputtransistor, (e.g. output FET). By controlling the bias of the commongate FET, the gain of the LNA can be controlled. However, reducing thecurrent by controlling the bias of the output FET typically places theFET in a non-linear state, thus reducing the linearity of the LNA as awhole. Furthermore, controlling the bias to reduce the current alsotends to alter the impedance match at the input of the LNA. An impedancemismatch at the LNA input can cause significant distortion that willdegrade the overall performance of the front end and more generally ofthe receiver.

Alternatively, attenuators can be used at various locations within thefront end. However, it is difficult to achieve high linearity, goodnoise figure and desired power management goals when relying uponattenuators to control the gain of a front end LNA that needs to receivesignals over a wide dynamic range.

It can be seen that there is currently a need for a front end LNAarchitecture suitable for use in situations in which the input to thefront end is a signal having a relatively large dynamic range. Thepresent invention meets this need.

SUMMARY OF THE INVENTION

A low noise amplifier (LNA) architecture is disclosed that comprisesmultiple groupings of transistors, such as field effect transistors(FETs) that can be selectively shut off when not required. A first FETwithin each grouping (or path) is configured as a “common source” inputFET. A second FET within each path is configured as a “common gate”cascode output FET. In some embodiments, each path can further includeadditional FETs. Each path operates to provide a discrete amount ofamplification. In some modes, the LNA operates in an active bypass mode,in which the LNA provides either zero gain or negative gain (i.e.,attenuation). Switches are also used to configure the LNA to maintain arelatively consistent input and output impedance, to maintain a stablenoise figure, current density through the active LNA components andlinearity as paths are switched on and off.

The details of one or more embodiments of the invention are set forth inthe accompanying drawings and the description below. Other features,objects, and advantages of the invention will be apparent from thedescription and drawings, and from the claims.

DESCRIPTION OF THE DRAWINGS

FIG. 1 is a simplified schematic of relevant components of a low noiseamplifier (LNA) configured for use with inputs spanning a large dynamicrange.

FIG. 2 is an illustration of a configuration of an LNA having a thirdpath.

FIG. 3 is an illustration of another embodiment of an LNA in which abias voltage is coupled to each path.

FIG. 4 is an illustration of an LNA in which at least three paths, eachhave at least three FETs.

FIG. 4a is an illustration of an LNA in which at least three paths eachhave at least three FETs.

FIG. 4b is an illustration of an LNA that is similar to the LNA of FIG.4a , however, a single pole, double throw switch is used rather than asingle pole, single throw switch to control the configuration of thedegeneration inductor.

FIG. 5 is an illustration of an LNA that uses a number of paths andstacked FETs within the LNA with source switching.

FIG. 6 is a flowchart of a method in accordance with some embodimentsfor amplifying signals using an LNA having a low gain mode with lowcurrent consumption and high linearity.

Like reference numbers and designations in the various drawings indicatelike elements.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 1 is a simplified schematic of relevant components of a low noiseamplifier (LNA) 100 configured for use with inputs spanning a largedynamic range. In some embodiments of the disclosed method andapparatus, an input port 102 is coupled to the LNA 100. The LNA 100includes four transistors configured in two paths 101, 103, such asfield effect transistors (FETs) 104, 106, 108, 110. The first FET 104 isconfigured as a “common source” input FET. The second FET 106 isconfigured as a “common gate” output FET (or “cascode” configured outputFET). The first and second FETs 104, 106 are coupled in series to formthe first path 101 of the LNA 100. The third FET 108 is also configuredas a common source input FET. The gate of the third FET 108 is coupleddirectly to the gate of the first FET 104. The fourth FET 110 isconfigured as a common gate FET coupled in series with the third FET 108(i.e., having its source coupled to the drain of the third FET 108). Thethird and fourth FETs 108, 110 form the second path 103 of the LNA 100.In some embodiments, other types of transistors may be used, including,but not limited to, bipolar junction transistors. Furthermore, any typeof FET may be used to implement the LNA, including, but not limited tometal-oxide semiconductors (MOSFETs), junction field effect transistors(JFETs), insulated gate FETs (IGFETs), metal semiconductor FETs(MESFETs), etc. While some types of transistors may be better suited toparticular applications, the concepts associated with the disclosedmethod and apparatus do not exclude the use of any particular type oftransistor.

In accordance with some such embodiments, an input signal is applied tothe input port 102. An inductive element, such as an inductor 114,couples the signal to the gates of the input FETs 104, 108. In someembodiments, a degeneration inductance, such as provided by inductor116, is coupled between the source of the input FETs 104, 108 andground. However, in other embodiments, the source of the FETs 104, 108are coupled directly to ground. In some such embodiments, a conductorcoupled from the source of the two FETs 104, 108 to ground providessufficient inductance, eliminating the need for the inductor 116. A loadinductance, such as inductor 118, is coupled between the LNA powersupply VDD and the drains of the output FETs 106, 110. The output of theLNA 100 is taken from the source of the output FET 110 and coupled to anLNA output port 120 by an output matching circuit, which in the simplestembodiment is a capacitor 122.

A bias switch 124 allows the gate of the output FETs 110 to be coupledto the gate of the FET 106 and to a bias port 125. A bias voltage isapplied through the bias port. When open, the bias switch 124disconnects the gate of the FET 110 from the bias port 125. Agate/ground switch 126 is closed to pull the gate of the FET 110 toground when it is not connected to the gate of the FET 106. The twoswitches 124, 126 may be operated together (i.e., controlled by the samecontrol signal). Alternatively, each switch 124, 126 may be operatedindependently. Control signals for the switches are not shown for thesake of simplicity. However, it should be understood that each of theswitches 124, 126 may be implemented by an FET switch in which the gateis coupled to a control signal source to cause the switch to open, oralternatively, to close. Accordingly, a selected gain mode can beachieved by setting the switches 124, 126. Alternatively, in someembodiments, an external bias control processor (not shown) provides abias voltage directly to the gates of the FETs 106, 110 to achieve aselected gain mode. In such embodiments, the amount of bias provided(i.e., the particular voltage levels) can be controlled to alter some ofthe operating characteristics of the LNA 100 as may be appropriate forcertain operating conditions, including selecting the gain mode.Decreasing the current by controlling the bias voltage enables currentsavings without negatively impacting the impedance match between the LNAand the circuits to which the LNA is connected, the noise figure, thegain and the linearity of the LNA. However, at some point, one or moreof these factors will be negatively impacted.

In some embodiments, the switches 124, 126 are preferably not closed atthe same time (i.e., the two switches are preferably operated in“break-before-make” mode). Having both switches 124, 126 closed at thesame time will short the cascode gate voltage (Vbias) to ground. Oncethe short is released, it generally takes time for the gate voltage tocharge back up and return to its nominal operating value. This may causea disturbance to the RF performance of the amplifier, and thus to adegradation of the receiver performance until the bias voltage returnsto the nominal operating value.

In contrast, the contacts of the switch 422 preferably operate in a“make-before-break” mode, such that there is always a path for the biascurrent to ground through inductor 416. Cutting off the path for thebias current can alter the RF performance of the amplifier until the DCbias can stabilize.

In some embodiments of the disclosed method and apparatus, the FETs 104,106 of the first path 101 are essentially the same size. However, theFETs 108, 110 of the second path 103 are significantly larger than theFETs 1014, 106 of the first path 101. In some such embodiments, theratio of the size of the FETs 104, 106 of the first path 101 to the sizeof the FETs 108, 110 of the second path 103 is such that when both pathsare on, 2/10 of the current flows through the first path and 8/10 of thecurrent flows through the second path 103. This is noted in the figureby marking the FETs as 2/10 or 8/10. Accordingly, the first path 101 issaid to have a “path weight” of 2/10 and the second path 103 has a pathweight of 8/10.

By setting the bias voltage (i.e., using the switch 124 to disconnectthe gate of the FET 110 from the bias voltage and setting switch 126 topull the gate to ground), the current through the second path 103 of theLNA is essentially turned off. Therefore, the output FET 110 will notconduct and no current will flow through the second path 103. Shuttingoff the second path 103 of the LNA 100, implements a low gain mode inwhich the gain of the LNA 100 is reduced without changing the currentthat flows through the two FETs 104, 106 of the first path 101 of theLNA 100. This scheme allows selection of a gain mode, wherein the LNA tobe operated in a low gain mode in which the input impedance, noisefigure and linearity of the LNA are minimally affected by operation inthe low gain mode. Concurrently, the current consumption of the LNA 100is reduced when at least one of the paths of the LNA are “shut off”.Selection of the particular path weight of the paths that are conductingcan be used to control the gain, current consumption, output power andlinearity of the LNA. In addition, selection of the gain mode (i.e.,which particular paths that are conducting) allows trade-offs to be madebetween parameters, such as gain, linearity and current consumption,etc. In some embodiments, the low gain mode is an active bypass mode inwhich the gain is either zero or negative.

This configuration can be expanded in two dimensions. That is, in someembodiments, additional paths can be added to expand the LNA in a firstdimension. In addition to additional paths, additional FETs can beprovide in each path, expanding the LNA in a second dimension. Addingadditional paths provides greater flexibility and control of the gain ofthe LNA. Adding additional FETs to each path increases the ability ofeach path to withstand higher voltages from VDD to ground.

FIG. 2 is an illustration of a configuration of an LNA 200 having athird path 201. It should be understood that while FIG. 2 shows threepaths 101, 103, 201, several more paths can be added to the LNA 200. TheFETs 204, 206 of the additional path 201 can either be the same size asthe FETs 104, 106 of the first path 101 or the FETs 108, 110 of thesecond path 103. Alternatively, the FETs 204, 206 of additional pathscan be of different sizes to allow for a greater range in the gain thatcan be provided by the LNA 200. The additional paths 103, 201 can beactivated independently, such that each path is turned on in additionalto, or in place of, those that were previously turned on.

FIG. 3 is an illustration of another embodiment of an LNA 300 in which abias voltage is coupled to each path 101, 103, 201. Each bias voltage iscoupled to the corresponding output FET 106, 110, 204 independently. Insome embodiments, a different bias (V_(bias1), V_(bias2), V_(bias3)) isapplied to the gate of each FET 106, 110, 204. In some embodiments, abias voltage is always applied to the first path 101. In suchembodiments, the bias switch 305 and gate/ground switch 307 are notprovided. The state of each bias switch 305, 324, 301 determines whetherthe corresponding path 101, 103, 201 is active. In some suchembodiments, control of the bias voltage is handled by a bias controlprocessor (not shown). In such embodiments, the bias switches 305, 324,301 and gate/ground switches 305, 126, 303 may also not be necessary.Alternatively, the same bias voltage (V_(bias1)) is applied to each andthe switches 305, 307, 324, 126, 301, 303 control which paths 101, 103,201 will be conducting.

In some embodiments, different path weights (i.e., different sized FETs)in each path can be used. Accordingly, turning on paths having differentweights provides maximum flexibility in the total current of the LNA 200and so flexibility in the total gain of the LNA 200. For example, in thecase in which there are three paths, the second path 103 could have aweight (i.e., FETs 108, 110 have relative size) that is twice the weightof the first path 101 (i.e., first path 101 has weight of 1/7, secondpath 103 has weight of 2/7). The third path 201 could have a weight of4/7 that is twice that of the second path 103. Therefore, by allowingall combinations of the three paths to be possible, 7 different gainmodes can be selected (noting that at least one path must be turned onfor the LNA 200 to be operational). Any number of paths are possible,including 2 to 6 such paths or more.

FIG. 4a is an illustration of an LNA 400 in which at least three paths401, 403, 405 each have at least three FETs. Looking at the first path401, a stacked FET 402 is connected with the drain coupled to the sourceof the output FET 106 and the source of the stacked FET 402 coupled tothe drain of the input FET 104. In alternative embodiments, any numberof additional stacked FETs may be laid in series with the three FETs106, 402, 104 coupled in a manner similar to that of the stacked FET402. Similar to the first path 401, each other path 403, 405 has atleast one stacked FET 404, 406.

The gate of each of the stacked FETs 402, 404, 406 can be coupled to abias voltage through a bias switch 407, 411, 415. When the bias switchis open, an associated gate/ground switch 409, 413, 417 can pull thegate to ground. Alternatively, each bias switch can be coupled to acommon bias voltage source. In yet other embodiments, the bias to eachof the gates of the output FETs 106, 110, 204 and the stacked FETs 402,404, 406 can be controlled by a bias control processor. In some suchembodiments, the bias switches 407, 411, 415 and associated gate/groundswitches 409, 413, 417 are not provided. In some embodiments, the stackheight (i.e., number of stacked FETs) in each path will depend upon thedimensions (e.g., gate length and oxide thickness, etc.) of andcharacteristics (i.e., technology used to fabricate the FETs) of each ofthe FETs in the path, the power levels of the LNA and the magnitude ofthe voltage between VDD and ground. That is, as the gate length andoxide thickness are reduced with newer generation technologies, thevoltage handling capability of each FET is reduced. Increasing thenumber of stacked FETs offsets this trend and allows the LNA to supportthe same voltage and power levels. In some embodiments, there are 6 FETsstacked in each path (i.e., four stacked FETs, the input FET and theoutput FET). Similarly, the number of paths will depend upon the gaincontrol that is desired. In some embodiments, there are six paths. Anycombination of number of paths and number of stacked FETs is within thescope of the contemplated and disclosed method and apparatus. Theparticular selection of the number of each will depend upon theparticular requirements that will be placed on the LNA.

In addition, two degeneration inductors 416, 418 are coupled in seriesbetween the source of the input FETs 104, 108, 206. A degenerationinductor switch 420 can be closed to reduce the degeneration inductanceby shorting one of the inductors 418 in different gain modes. Additionalinductors can be provided with additional switches to select the amountof degeneration inductance when there are several paths 401, 403, 405and accordingly, several gain modes that can be selected. In someembodiments, the degeneration inductor switch 420 can be connected to atap within a single inductor, rather than having two discrete inductors416, 418. Alternatively, several switches coupled to several differenttaps on the inductor can be provided. In some embodiments, one or bothof the inductances 416, 418 can be provided by the inductance of routingtraces between the sources of the input FETs 104, 108, 206 and ground.In such embodiments, the bypass switch 420 shortens the distance betweenthe sources and ground when closed.

FIG. 4b is an illustration of an LNA 450 that is similar to the LNA 400.However, a single pole, double throw switch 422 is used rather than asingle pole, single throw switch 420. Accordingly, when the inductor 416is to be used alone, the inductor 418 is disconnected by the switch 422.Disconnecting the inductor 418 can reduce coupling and loss in theunused inductor 418. In addition, a capacitor 424 is coupled in serieswith a switch 426. When the switch is closed, the capacitor 424 isplaced in parallel with the degeneration inductors 416, 418. Closing theswitch 426 to place the capacitor 424 in parallel with the degenerationinductor 416, 418 increases the effective degeneration inductance.

FIG. 5 is an illustration of an LNA 500 that uses a number of paths andstacked FETs within the LNA 500, wherein the source of each of the inputFETs 104, 108, 206 can be disconnected from the source of the otherinput FETs. One of the effects of turning off the current that flowsthrough a path of the LNA 500 is that the capacitance from gate tosource C_(gs) of the FETs that are not conducting decreases. Thedecrease in the C_(gs) of those input FETs that are not conducting willaffect the input impedance of the LNA 500. Accordingly, the LNA 500 hassource switches 502, 504 that allow the connection between the source ofeach of the input FETs 104, 108, 206 to be selectively closed when aninput FET 104, 108, 206 is not conducting. When the input FET 104, 108,206 is conducting, the source switch 502, 504 can be opened so eachconducting input FET is coupled to a separate inductance coupled to thesource of that FET. However, when the input FET is not conducting, thesource switch is closed to place the C_(gsoff) (i.e., the lower C_(gs))in parallel with the C_(gson) (i.e., the higher C_(gs)) of theconducting input FETs. Opening and closing the source switches 502, 504makes the input impedance of the LNA 500 more consistent as paths areturned on and off.

In addition, an additional capacitive element, such as capacitor 510,and an associated cap switch 512 provide a means to compensate for thelower C_(gs) when the input FET is not conducting. Thus, closing the capswitch 512 places the additional capacitance 510 in parallel with theCgs of the conducting input FETs, thereby establishing a totalcapacitance that is the same for any combination of paths of the LNA 500that are turned on or off. Additional capacitors 510 and cap switches512 can be provided in association with each path of the LNA 500.Additional switches (not shown) may be provided to disconnect thedegeneration inductances, such as inductors 504, 506, from the source ofan FET that is not conducting to maintain a consistent input impedance.In addition, one or more of the inductors 116, 506, 508 of the LNA 500can be replaced with two or more serially connected inductors and adegeneration inductor switch, such as shown in FIG. 4 and discussedabove with respect to the LNA 400. It should be noted that a sourceswitches 502, additional inductors 506, capacitor 510 and cap switch 512can also be used with the LNA 100 of FIG. 1. Additional informationregarding using source switched splitting is provided in copending U.S.application Ser. No. 15/342,016 which is hereby incorporated byreference.

Still further, at least one de-Qing resistance 514 and associated de-Qbypass switch 516 can be coupled in series between VDD and the drain ofthe FETs 106, 110, 204. Additional de-Qing resistances and associatedbypass switches (not shown) can be added to provide greater flexibilityin the selection of the resistance to be placed in parallel with theload inductance 118.

FIG. 6 is a flowchart of a method in accordance with some embodimentsfor amplifying signals using an LNA 100 having a low gain mode with lowcurrent consumption and high linearity. The method in accordance withone embodiment includes providing an LNA 100 having a plurality of paths101, 103 comprising at least an input FET 104, 108 and an output FET106, 110 (STEP 601). The method further includes selecting a gain modefrom at least two available gain modes (STEP 603). At least one switchbias switch 124 is controlled to activate the selected gain mode (STEP605). In some embodiments, selection of the gain mode may also includedetermining the bias voltage to apply to the bias port 125 (STEP 607).

As should be readily apparent to one of ordinary skill in the art,various embodiments of the invention can be implemented to meet a widevariety of specifications. Thus, selection of suitable component valuesis a matter of design choice (so long as the frequencies of interestmentioned above can be handled). The switching and passive elements maybe implemented in any suitable integrated circuit (IC) technology,including but not limited to MOSFET and IGFET structures. Integratedcircuit embodiments may be fabricated using any suitable substrates andprocesses, including but not limited to standard bulk silicon,silicon-on-insulator (SOI), silicon-onsapphire (SOS), GaAs pHEMT, andMESFET processes. Voltage levels may be adjusted or voltage polaritiesreversed depending on a particular specification and/or implementingtechnology (e.g., NMOS, PMOS, or CMOS). Component voltage, current, andpower handling capabilities may be adapted as needed, for example, byadjusting device sizes, “stacking” components to handle greatervoltages, and/or using multiple components in parallel to handle greatercurrents.

A number of embodiments have been described. It is to be understood thatvarious modifications may be made without departing from the spirit andscope of the claimed invention. For example, some of the steps describedabove may be order independent, and thus can be performed in an orderdifferent from that described. It is to be understood that the foregoingdescription is intended to illustrate and not to limit the scope of theinvention, which is defined by the scope of the following claims, andthat other embodiments are within the scope of the claims.

What is claimed is:
 1. A Low Noise Amplifier (LNA) comprising: (a) afirst path including a first input field effect transistor (FET) coupledin series with a first output FET, a gate of the first output FET beingcoupled to a bias voltage source; (b) a second path including a secondinput FET coupled in series with a second output FET, a gate of thefirst input FET coupled to a gate of the second input FET and a gate ofthe second output FET selectively coupled to a gate of the first outputFET; and (c) a first inductive element coupled between the first inputFET and ground; (d) a second inductive element coupled between thesecond input FET and ground; and (e) a source switch coupled between thesource of the first and second input FETs such that when the sourceswitch is closed, the source of the first input FET is coupled to thesource of the second input FET and when the source switch is open, thesource of the first input FET is disconnected from the source of thesecond input FET.
 2. The LNA of claim 1, further including a cap switchhaving a first and second terminal and a capacitive element having afirst and second terminal, the first terminal of the capacitive elementcoupled to the gate of the first input FET, the second terminal of thecapacitive element coupled to the first terminal of the cap switch andthe second terminal of the cap switch coupled to the source of the firstinput FET.
 3. The LNA of claim 1, further including at least oneadditional path, the at least one additional path including an input FETand an output FET coupled in series, a gate of the input FET of the atleast one additional path being selectively coupled to the gate of theoutput FET of the previous path and a gate of the input FET of theadditional path coupled to the gate of the input FET of the previouspath.
 4. The LNA of claim 3, further including at least one additionalinductive element, each coupled between the source of the input FET of acorresponding additional path and ground and additional source switchescoupled between the source of a corresponding additional path and theinput FET of the previous path, such that when the source switch isclosed, the source of the input FET of the corresponding path is coupledto the source of the input FET of the previous path and when the sourceswitch is open, the source of the input FET of the corresponding path isdisconnected from the source of the input FET of the previous path. 5.The LNA of claim 4, further including a cap switch having a first andsecond terminal and a capacitive element having a first and secondterminal, the first terminal of the capacitive element coupled to thegate of the first input FET, the second terminal of the capacitiveelement coupled to the first terminal of the cap switch and the secondterminal of the cap switch coupled to the source of the first input FET.6. The LNA of claim 3, wherein at least one of the paths furtherincludes at least one stacked FET coupled between the input FET and theoutput FET of that path.
 7. The LNA of claim 6, wherein a gate of atleast one of the stacked FETs is coupled to a bias source.
 8. The LNA ofclaim 7, wherein each path further includes at least one bias switchcoupled between a bias source and a gate of the corresponding stackedFET within the path, such that when the bias switch is closed, the gateof the corresponding stacked FET is coupled to a bias source and whenthe bias switch is open, the gate of the corresponding stacked FET isdisconnected from the bias source.
 9. A method for amplifying signalshaving a wide dynamic range, including: (a) selecting a gain mode; (b)setting at least one bias voltage based on the selected gain mode andapplying the at least one bias voltage to corresponding gates of outputFETs of an LNA to achieve the selected gain mode, the LNA having aplurality of paths, each path having an input FET and an output FET,each input FET being coupled in series with a corresponding output FETwithin the same path; (c) coupling a capacitance between the gate andsource of an input FET that is conducting when at least one other inputFET is not conducting; and (d) selecting a value of the capacitance tobe coupled between the gate and source, such that the input impedance ofthe LNA will be the same as when the input FET that is not conductingwas conducting.